Photoemission study from Si and GaAs using a spatially varying vector potential


Photoemission calculations in the case of semiconductors like gallium arsenide (GaAs) and silicon (Si) using a spatially dependent vector potential is presented here. The logarthmic dielectric model of Gurung and Thapa is used for the calculation of vector potential. The vector potential thus developed is used for the calculation of photocurrent for which Kronig-Penney potential has been used to define the crystal potential from which the initial state wave-function for the surface state is derived.

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