Defect induced magnetism on SiC monolayer

Lalhumhima, Lalmuanchhana, Ramesh Chandra Tiwari, Shivraj Gurung, Lalhriatzuala

Science Vision 23 (1), 6-11 | Published on 27 April 2023 | https://doi.org/10.33493/scivis.23.01.02

Abstract

Using spin-polarized density functional theory, magnetic induction by means of vacancy defect was studied on SiC monolayer. While pristine SiC monolayer is found to be a semiconductor with a direct band gap of 2.64eV, vacancy of both Si and C defect transforms it into metallic ferromagnetic material. Calculated magnetization density shows that Si vacancy results in a magnetic moment of while C vacancy results to a magnetic moment of . Observations reveals that magnetism mostly arises from the unpaired electrons that arise as a result of the removed Si/C atom and spin asymmetry arises mainly from the p-orbitals of Si/C as a result of vacancy. Our result shows that magnetism can be introduced in SiC monolayer effectively using vacancy defect and can further be altered depending on the type of defect

Abstract Full Text Download