Defect induced magnetism on SiC monolayer


Using spin-polarized density functional theory, magnetic induction by means of vacancy defect was studied on SiC monolayer. While pristine SiC monolayer is found to be a semiconductor with a direct band gap of 2.64eV, vacancy of both Si and C defect transforms it into metallic ferromagnetic material. Calculated magnetization density shows that Si vacancy results in a magnetic moment of while C vacancy results to a magnetic moment of . Observations reveals that magnetism mostly arises from the unpaired electrons that arise as a result of the removed Si/C atom and spin asymmetry arises mainly from the p-orbitals of Si/C as a result of vacancy. Our result shows that magnetism can be introduced in SiC monolayer effectively using vacancy defect and can further be altered depending on the type of defect

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